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sa601 low voltage lna and mixer 1 ghz product data supersedes data of 1994 dec 15 2004 dec 14 integrated circuits
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2 2004 dec 14 description the sa601 is a combined rf amplifier and mixer designed for high-performance low-power communication systems from 800-1200mhz. the low-noise preamplifier has a 1.6db noise figure at 900mhz with 11.5db gain and an ip3 intercept of -2dbm at the input. the gain is stabilized by on-chip compensation to vary less than 0.2db over -40 to +85 c temperature range. the wide-dynamic-range mixer has a 9.5db noise figure and ip3 of 2dbm at the input at 900mhz. the nominal current drawn from a single 3v supply is 7.4ma. the mixer can be powered down to further reduce the supply current to 4.4ma. features ? low current consumption: 7.4ma nominal, 4.4ma with the mixer powered-down ? outstanding lna noise figure: 1.6db at 900mhz ? high system power gain: 18db (lna + mixer) at 900mhz ? excellent gain stability versus temperature and supply voltage ? external >-7dbm lo can be used to drive the mixer pin configuration dk package 1 2 3 4 5 6 7 8 9 10 11 12 13 14 20 19 18 17 16 15 v cc gnd lna out gnd mixer in gnd mixer out mixer out gnd v cc v cc lna gnd lna in gnd gnd gnd mixer pwrdn gnd loin1 loin2 sr00059 figure 1. pin configuration applications ? 900mhz cellular front-end (nadc, gsm, amps, tacs) ? 900mhz cordless front-end (ct1, ct2) ? 900mhz receivers ordering information description temperature range order code dwg # 20-pin plastic shrink small outline package (surface-mount, ssop) -40 to +85 c SA601DK sot266-1 block diagram 4 3 2 15 20 19 18 17 16 7 610 9 8 15 14 13 12 11 gnd mixer pwrdn lo in1 lo in2 v cc gnd mixer in gnd mixer out gnd lna lo rf if gnd lna in gnd if gnd lna out gnd gnd mixer out v cc v cc buffer sr00058 figure 2. block diagram
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 3 absolute maximum ratings 3 symbol parameter rating units v cc supply voltage 1 -0.3 to +6 v v in voltage applied to any other pin -0.3 to (v cc + 0.3) v p d power dissipation, t a = 25 c (still air) 2 20-pin plastic ssop 980 mw t jmax maximum operating junction temperature 150 c p max maximum power input/output +20 dbm t stg storage temperature range 65 to +150 c note: 1. transients exceeding 8v on v cc pin may damage product. 2. maximum dissipation is determined by the operating ambient temperature and the thermal resistance, q ja : 20-pin ssop = 110 c/w 3. pins 9 and 10 are sensitive to electrostatic discharge (esd). recommended operating conditions symbol parameter rating units v cc supply voltage 2.7 to 5.5 v t a operating ambient temperature range -40 to +85 c t j operating junction temperature -40 to +105 c dc electrical characteristics v cc = +3v, t a = 25 c; unless otherwise stated. symbol parameter test conditions limits units symbol parameter test conditions min typ max units i cc su pp ly current 7.4 ma i cc su ly current mixer power-down input low 4.4 ma v lnain lna input bias voltage 0.78 v v lnaout lna output bias voltage 2.1 v v mxin mixer rf input bias voltage 0.94 v
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 4 ac electrical characteristics v cc = +3v, t a = 25 c; lo in = -7dbm @ 964mhz; unless otherwise stated. symbol parameter test conditions limits units symbol parameter test conditions -3 s typ +3 s units s 21 amplifier gain 881mhz 10 11.5 13 db d s 21 / d t gain temperature sensitivity 881mhz 0.003 db/ c d s 21 / d f gain frequency variation 800mhz - 1.2ghz 0.01 db/mhz s 12 amplifier reverse isolation 881mhz -20 db s 11 amplifier input match 1 881mhz -10 db s 22 amplifier output match 1 881mhz -10 db p -1db amplifier input 1db gain compression 881mhz -16 dbm ip3 amplifier input third order intercept f 2 f 1 = 25khz, 881mhz -3.5 -2 -0.5 dbm nf amplifier noise figure 881mhz 1.3 1.6 1.9 db vg c mixer voltage conversion gain: r p = r l = 1k w f s = 881mhz, f lo = 964mhz, f if = 83mhz 18.0 19.5 21.0 db pg c mixer power conversion gain: r p = r l = 1k w f s = 881mhz, f lo = 964mhz, f if = 83mhz 5.0 6.5 8.0 db s 11m mixer input match 1 881mhz -10 db nf m mixer ssb noise figure 881mhz 8.0 9.5 11.0 db p -1db mixer input 1db gain compression 881mhz -13 dbm ip3 m mixer input third order intercept f 2 f 1 = 25khz, 881mhz -3.5 -2 -0.5 dbm ip 2int mixer input second order intercept 881mhz 12 dbm p rfm-if mixer rf feedthrough 881mhz -7 db p lo-if lo feedthrough to if 881mhz -25 db p lo-rfm lo to mixer input feedthrough 881mhz -38 db p lo-rf lo to lna input feedthrough 881mhz -40 db p lnarfm lna output to mixer input 881mhz -40 db p rfmlo mixer input to lo feedthrough 881mhz -23 db lo in lo drive level 964mhz -7 dbm note: 1. simple l/c elements are needed to achieve specified return loss.
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 5 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 vcc gnd lna in gnd gnd mixer pd gnd lo in lo in vcc gnd lna out gnd mixer in gnd mixer out mixer out gnd gnd vcc lna in c1 c15 l1 56nh c2 2.7pf 100pf c11 100pf c12 2.2pf lna out c10 100pf mixer in c9 4.7pf c13 100pf 270nh c6 8.2pf l = 110 mils l = 95 mils w = 15 mils w = 15 mils v cc 1 m f 100pf sa601 c4 u1 v cc j1 c14 100nf j2 ext lo (-7dbm, 964mhz) j5 l = 190 mils w = 15 mils j4 v cc 18pf 2.2k c8 100nf mixer out j3 (50 w , 83mhz) c3 100pf 33pf l3 l2 470nh r2 c5 c7 l = 535 mils w = 10 mils l = 535 mils w = 10 mils * see mixer power gain note below * ** ** spiral inductors on natural fr-4, 62 mils thick ** *** *** see mixer filter interface note below sr00060 r1 100 w figure 3. application circuit circuit technology lna impedance match: intrinsic return loss at the input and output ports is 7db and 9db, respectively. with no external matching, the associated lna gain is 10db and the noise figure is 1.4db. however, the return loss can be improved at 881mhz using suggested l/c elements (figure 5) as the lna is unconditionally stable. noise match: the lna achieves 1.6db noise figure at 881mhz when s 11 = -10db. further improvements in s 11 will slightly decrease the nf and increase s 21 . temperature compensation: the lna has a built-in temperature compensation scheme to reduce the gain drift to 0.003db/ c from 40 c to +85 c. supply voltage compensation: unique circuitry provides gain stabilization over wide supply voltage range. the gain changes no more than 0.5db when v cc increases from 3v to 5v. lo drive level: resistor r1 can be replaced by an inductor of 4.7nh and c3 should be adjusted to achieve a good return loss at the lo port. under this condition, the mixer will operate with less than -10dbm lo drive. ip3 performance: c9 between pin 16 and ground can be removed to introduce 3db mismatch loss, while improving the ip3 to +3dbm. the associated noise figure is 11db. mixer input match: the mixer is configured for maximum gain and best noise figure. the user needs to supply l/c elements to achieve this performance. power gain: the gain can be increased by approximately 1.5db by placing r2 across c7, instead of c5. power down: the mixer can be disabled by connecting pin 7 to ground. when the mixer is disabled, 3ma is saved. power combining: the mixer output circuit features passive power combining (patent pending) to optimize conversion gain and noise figure performance without using extra dc current or degrading the ip3. for if frequencies significantly different than 83mhz, the component values must be altered accordingly. filter interface: for system integration where a high impedance filter of 1k w is to be cascaded at the mixer if output, capacitors c5 and c6 need to be changed to 27pf and 1000pf, respectively.
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 6 sr00061 figure 4. sa601 demoboard layout (not actual size)
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 7 typical performance characteristics ch1 s 22 1 u fs 4: 99.543 w -85.949 w 8.937 pf start 200.000 000 mhz stop 1200.000 000 mhz 1: 2: 3: 31.48 w -14.217 w 900 mhz 44.82 w -30.191 w 600 mhz 58.725 w -50.83 w 400 mhz 200.000 000 mhz ch1 s 11 1 u fs 4: 63.852 w -160.23 w 4.9269 pf 200.000 000 mhz start 200.000 000 mhz stop 1200.000 000 mhz 1: 2: 3: 27.471 w -35.48 w 600 mhz 21.286 w -12.381 w 900 mhz 36.43 w -70.445 w 400 mhz sr00062 figure 5. lna input and output match (at device pin)
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 8 typical performance characteristics (continued) ch1 s 12 100 mu fs 4: 35.343 mu -76.128 200.000 000 mhz start 200.000 000 mhz stop 1200.000 000 mhz 1: 2: 3: 89.561mu 61.127 900 mhz 74.51mu 64.608 600 mhz 58.082mu 67.162 400 mhz ch1 s 21 7 u fs 4: 6.2863 u -150.58 200.000 000 mhz start 200.000 000 mhz stop 1200.000 000 mhz 1: 2: 3: 3.2504u 91.219 900 mhz 4.6877u 112.03 600 mhz 5.3895u 130.33 400 mhz sr00063 figure 6. lna transmission and isolation characteristics (at device pin)
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 9 typical performance characteristics (continued) ch1 s 11 1 u fs 4: 10.867 w 1.6426 w 1.2543 nh 200.000 000 mhz start 200.000 000 mhz stop 1200.000 000 mhz 1: 6.7168 w 9.5952 w 900 mhz sr00064 figure 7. mixer rf input match (at device pin) table 1. typical lna and mixer s-parameters lna mixer f s 11 s 22 s 21 s 12 s 11 200mhz 63.852 w j 160.23 w 99.543 w j 85.949 w 6.2863u 150.58 35.343mu 76.128 10.867 w + j 1.6426 w 300mhz 44.879 w j 101.69 w 73.387 w j 67.707 w 5.8096u 140.47 47.946mu 71.169 10.4 w + j 3.4609 w 400mhz 36.43 w j 70.445 w 58.725 w j 50.83 w 5.3895u 130.33 58.082mu 67.162 10.067 w + j 4.897 w 500mhz 30.395 w j 48.393 w 49.928 w j 38.813 w 5.0428u 120.5 66.44mu 66.388 9.394 w + j 6.0142 w 600mhz 27.471 w j 35.48 w 44.82 w j 30.191 w 4.6877u 112.03 74.51mu 64.608 8.8945 w + j 7.2227 w 700mhz 24.428 w j 25 w 39.268 w j 24.502 w 4.2409u 104.44 82.235mu 65.002 8.1353 w + j 8.1597 w 800mhz 22.434 w j 17.255 w 34.664 w j 18.59 w 3.7491u 97.765 86.582mu 62.743 7.976 w + j 9.1958 w 900mhz 21.286 w j 12.381 w 31.48 w j 14.217 w 3.2504u 91.219 89.561mu 61.127 6.7168 w + j 9.5952 w 1000mhz 20.261 w j 8.7109 w 27.887 w j 10.77 w 2.8785u 84.957 95.135mu 60.539 6.2393 w + j 10.271 w 1100mhz 19.718 w j 6.252 w 25.741 w j 8.2607 w 2.5752u 82.893 97.348mu 62.202 6.0791 w + j 10.571 w 1200mhz 19.101 w j 4.9316 w 23.584 w j 6.2715 w 2.1386u 80.257 96.558mu 61.563 5.8185 w + j 10.288 w
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 10 typical performance characteristics (continued) ch1 s 11 log mag 2 db/ ref -5 db -40 c 85 c 25 c start 800.000 000 mhz stop 1 200. 000 000 mhz mixer rf input match vs. frequency (v cc = 3v) ch1 s 12 log mag 5 db/ ref -10 db start 800.000 000 mhz stop 1 200. 000 000 mhz ch1 s 21 log mag 1 db/ ref 10 db start 800.000 000 mhz stop 1 200. 000 000 mhz ch1 s 22 log mag 3 db/ ref -10 db start 800.000 000 mhz stop 1 200. 000 000 mhz ch1 s 11 log mag 1 db/ ref -10 db start 800.000 000 mhz stop 1 200. 000 000 mhz -40 c 85 c 25 c lna gain (s 21 ) vs. frequency (v cc = 3v) -40 c 85 c 25 c -40 c 85 c 25 c -40 c 85 c 25 c lna isolation (s 12 ) vs. frequency (v cc = 3v) lna input match (s 11 ) vs. frequency (v cc = 3v) lna output match (s 22 ) vs. frequency (v cc = 3v) 9 icc (ma) v cc (v) i cc vs. v cc and temperature 2.5 3 3.5 4 4.5 5 5.5 8.5 8 7.5 7 6.5 6 5.5 5 40 c 25 c +85 c sr00065 figure 8. typical performance characteristics (cont.)
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 11 typical performance characteristics (continued) 7 6.5 6 5.5 5 2.5 3 3.5 4 4.5 5 5.5 gain (db) v cc (v) mixer gain @ 83mhz vs. v cc and temperature 3 gain (db) 2.5 3 3.5 4 4.5 5 5.5 v cc (v) 2 1 0 1 2 3 4 5 6 7 mixer ip3 @ 83mhz vs. v cc and temperature 40 c 25 c +85 c 40 c 25 c +85 c +70 c 12 nf (db) 2.5 3 3.5 4 4.5 5 5.5 v cc (v) mixer nf @ 83mhz vs. v cc and temperature 11.5 11 10.5 10 9.5 9 40 c 25 c +85 c 36 db v cc (v) lo to mixer in feedthrough vs. v cc 37 38 39 40 2.5 3 3.5 4 4.5 5 5.5 36 db v cc (v) lo to lna input feedthrough vs. v cc 37 38 39 40 2.5 3 3.5 4 4.5 5 5.5 20 db v cc (v) mixer input to lo feedthrough vs. v cc 2.5 3 3.5 4 4.5 5 5.5 21 22 23 24 25 sr00066 figure 9. typical performance characteristics (cont.)
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 12 typical performance characteristics (continued) 23 db v cc (v) lo feedthrough to if vs. v cc 2.5 3 3.5 4 4.5 5 5.5 24 25 26 27 5 db v cc (v) mixer rf feedthrough vs. v cc 2.5 3 3.5 4 4.5 5 5.5 6 7 8 38 db v cc (v) lna output to mixer input vs. v cc 2.5 3 3.5 4 4.5 5 5.5 39 40 41 42 12.50 gain (db) v cc (v) lna gain vs. v cc and temperature 2.5 3 3.5 4 4.5 5 5.5 12.00 11.50 11.00 10.50 40 c 25 c +85 c 4.00 db v cc (v) lna ip3 vs. v cc and temperature 2.5 3 3.5 4 4.5 5 5.5 2.00 0.00 2.00 4.00 6.00 8.00 10.00 40 c 25 c +85 c 2.50 db v cc (v) lna nf vs. v cc and temperature 2.5 3 3.5 4 4.5 5 5.5 2.00 1.50 1.00 0.50 0.00 40 c 25 c +85 c sr00067 figure 10. typical performance characteristics (cont.)
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 13 ssop20: plastic shrink small outline package; 20 leads; body width 4.4 mm sot266-1
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 14 revision history rev date description _2 20041214 product data (9397 750 14447); supersedes sa601 of 15 dec 1994. modifications: ? added package outline and legal information _1 19941215 product specification
philips semiconductors product data sa601 1ghz low voltage lna and mixer 2004 dec 14 15 definitions short-form specification e the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed i nformation see the relevant data sheet or data handbook. limiting values definition e limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the l imiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any o ther conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affec t device reliability. application information e applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors ma ke no representation or warranty that such applications will be suitable for the specified use without further testing or modificatio n. disclaimers life support e these products are not designed for use in life support appliances, devices, or systems where malfunction of these products ca n reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applica tions do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes e philips semiconductors reserves the right to make changes in the productseincluding circuits, standard cells, and/or softwaree described or contained herein in order to improve design and/or performance. when the product is in full production (status `production') , relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for th e use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranti es that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . ? koninklijke philips electronics n.v. 2004 all rights reserved. printed in u.s.a. date of release: 12-04 document order number: 9397 750 14447

data sheet status [1] objective data preliminary data product data product status [2] [3] development qualification production definitions this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the specification in any manner without notice. this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change notification (cpcn). data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level i ii iii

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